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Product Variant Information section
Product Specification Section
Pricing Section

Stock: 0

On Order: 0
Factory Stock:Factory Stock: 0
Factory Lead Time: N/A
Minimum Order: 736
Multiple Of: 368
Quantity Web Price
368+ $22.83
Total:

$16,802.88

USD
Attributes
Attributes Table
Memory Density 16Mb
Interface Type Parallel
Memory Organization 1 M x 16
Supply Voltage-Nom 3V to 3.6V
Access Time-Max 35ns
Temperature Range 0°C to 70°C
Features and Applications

The MR4A16BMA35 is a magnetoresistive random access memory (MRAM) device organized as 1,048,576 words of 16 bits. It is available in a small footprint 48-pin ball grid array (BGA) package.

This device offers SRAM compatible 35 ns read/write timing with unlimited endurance. The data is always non-volatile for greater than 20 years. Data is automatically protected on power loss by low-voltage inhibit circuitry to prevent  writes with voltage out of specification.

Features:

  • +3.3 Volt power supply
  • Fast 35 ns read/write cycle
  • SRAM compatible timing
  • Unlimited read & write endurance
  • Data always non-volatile for >20 years at temperature
  • RoHS-compliant small footprint BGA and TSOP2 package
  • AEC-Q100 Grade 1 option in TSOP2 package.

Benefits:

  • One memory replaces FLASH, SRAM, EEPROM and BBSRAM in systems for simpler, more efficient designs
  • Improves reliability by replacing battery-backed SRAM

View the available MR4A16B series of MRAMs