Manufacturer Part #
CY62157EV30 Series 8 Mb (512 K x 16) 2.2 - 3.6 V 45 ns Static RAM - VFBGA-48
|Standard Pkg:|| |
Product Variant Information section
480 per Tray
Description of Change: Cypress announces the qualification of UMC's 65nm (No. 3, Li-Hsin 2nd Rd., Hsinchu Science Park, Hsinchu, Taiwan, R.O.C.) as an alternate wafer fab site for select 90nm 1.65V - 3.6V industrial grade 8Mb MoBLTM products. The 65nm products are drop-in replacement parts and form, fit, and function compatible with the 90nm 8Mb Async MoBLTM SRAM products manufactured at SkyWater, Minnesota. There are some updates to certain DC specifications, including a revision in the VCC operating supply current at f = 1MHz (ICC) at 85�C from 3mA to 7mA and data retention current (ICCDR) at 85�C from 5?A to 8?A for the 3.0V device and from 3?A to 9?A for the 1.8V device. The updated product datasheets are attached to this notification and can be downloaded from the Cypress Website (www.cypress.com). There is no change to the existing marketing part numbers. Benefit of Change: Qualification of alternate manufacturing sites and technologies is part of Cypress' ongoing flexible manufacturing initiative. The goal of the flexible manufacturing initiative is to provide the means for Cypress to continue to meet delivery commitments through dynamic, changing market conditions.
Addendum to PIN195102 - Manufacturing Label and Packing Configuration Standardization Description of Change: The purpose of this addendum is to correct the date from January 20, 2019 to January 20, 2020, in the "3rd paragraph in the 'Description of Change' section. This notification is to inform customers that Cypress will be standardizing its manufacturing labels and tray/tube packing configuration. It may be recalled that the Cypress entity consolidation (following the merger with Spansion Corp) was announced via Product Information Notification PIN174801 in November 2017. As the next phase of the entity consolidation process, Cypress will be adapting a new manufacturing label format for all products and revising shipping configurations for select product shipped in trays and tubes.
Planned Qualification of Spansion Manufacturing Sites for Cypress ProductsDescription of Change:In concert with the recently announced merger between Cypress Semiconductor Corporation (Cypress) and Spansion Inc. (Spansion), Cypress announces plans to qualify proprietary SONOS Technology products at Spansion Fab 25 / Test 25 in Austin, Texas and BGA/TSOP-packaged products at the Spansion assembly facility in Bangkok, Thailand. These qualifications and implementations are expected to occur throughout 2015 and 2016. Once complete, the qualifications will be announced through regular PCNs.This is an advance notification and no immediate action is needed. Refer to the attached Supplier documentation for the complete schedule of the activity, PCN issue dates and shipment start dates.
|Memory Organization:||512 K x 16|
|Supply Voltage-Nom:||2.2V to 3.6V|
|Mounting Method:||Surface Mount|
Features & Applications
Cypress's More Battery Life™ (MoBL®) SRAMs dominate the low-power SRAM market with the industry's widest portfolio, starting from low (64 Kb) to very high densities (extending up to 64 Mb) with standard voltage (nominal) and bus-width options, at the cutting edge of process technology.
Cypress More Battery Life™ (MoBL®) SRAMs offer best-in-class access times (45 ns) with the industry's lowest Standby Power Dissipation (Maximum), making them the ideal high-performance, high-battery life memory solutions for mobile phones, PDAs, Point of Sale (POS) terminals, handheld radio-sets/gaming machines, Automotive Audio, ECU, Navigation and Telematics Systems.
Cypress More Battery Life™ (MoBL®) can be designed-in with a battery and a memory controller, to be used as Super-Fast Non-Volatile-SRAM for security circuitry, with a non-volatile memory life of 7 to 9 years.
The Micropower SRAMs are offered in industry standard packaging options (RoHS-compliant), in Industrial and Automotive Temperature Range.
The CY62157EV30LL-45BVXI is a Ultra Low Power 8 Meg SRAM organized as 512K words by 16 bits with a speed of 45ns, available in a 48-ball Very Fine Pitch Ball Grid Array package and has industrial temperature specifications.
This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling.
480 per Tray