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Manufacturer Part #

2N6052G

2N Series 100 V 12 A Darlington Complementary Silicon Power Transistor TO-204AA

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Type: Darlington
Polarity: PNP
CE Voltage-Max: 100V
Collector Current Max: 12A
DC Current Gain-Min: 750
Package Style:  TO-3 (TO-204)
Mounting Method: Screw Mount
Features & Applications

On Semi’s 2N6052G is a 12A, 100V Darlington PNP transistor.  The 2N6052G is a  through hole device, available in a 2-pin, TO-204, 1-07 Case outline offered in a tray.  The 2N6052G is a complementary silicon power Darlington transistor.

Features:

  • High DC Current Gain
    • hFE = 3500 (Typ) @ IC = 5.0 Adc
  • Collector-Emitter Sustaining Voltage— @ 100 mA
    • VCEO(sus) = 80 Vdc (Min)—2N6058
    • 100 Vdc (Min)—2N6052, 2N6059
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistors
  • This is a Pb-Free Device
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
200
Multiple Of:
100
Total
$1,482.00
USD
Quantity
Web Price
100
$9.02
200
$7.41
300
$7.30
400+
$7.22
Product Variant Information section