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Manufacturer Part #

BFU630F,115

BU 510 - SECURITY & CONNECTIVITY

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
NXP BFU630F,115 - Technical Attributes
Attributes Table
Polarity: NPN
Type: RF
CE Voltage-Max: 5.5V
Collector Current Max: 30mA
Power Dissipation-Tot: 200mW
DC Current Gain-Min: 90
Package Style:  SOT-343F-4
Mounting Method: Surface Mount
$Features & Applications

The BFU630F Series is a NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features:

  • 40 GHz fT silicon technology
  • High maximum stable gain 26 dB at 1.8 GHz
  • Low noise high gain microwave transistor
  • Noise figure (NF) = 0.85 dB at 2.4 GHz

Applications:

  • AMR
  • Analog/digital cordless applications
  • Bluetooth
  • FM radio
  • GPS
  • Ku band oscillators DRO’s
  • LNB
  • Low noise amplifiers for microwave communications systems
  • LTE, cellular, UMTS
  • Mobile TV
  • RKE
  • WLAN and CDMA applications
  • ZigBee
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
6000
Multiple Of:
3000
Total
$1,530.00
USD
Quantity
Web Price
3,000
$0.26
6,000
$0.255
9,000
$0.25
12,000
$0.25
15,000+
$0.245
Product Variant Information section