
Manufacturer Part #
BFU660F,115
BFU660 Series 5.5 V 27 dB Gain NPN Wideband Silicon RF Transistor - SOT-343F-4
Product Specification Section
NXP BFU660F,115 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
NXP BFU660F,115 - Technical Attributes
Attributes Table
Polarity: | NPN |
CE Voltage-Max: | 5.5V |
Package Style: | SOT-343F-4 |
Mounting Method: | Surface Mount |
Features & Applications
The BFU660F Series is a NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
Features:
- Low noise high linearity RF transistor
- High output third-order intercept point 27 dBm at 1.8 GHz
- 40 GHz fT silicon technology
Applications:
- Analog/digital cordless applications
- X-band high output buffer amplifier
- ZigBee
- SDARS second stage LNA
- LTE, cellular, UMTS
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
26 Weeks
Quantity
Web Price
3,000
$0.205
6,000
$0.20
9,000
$0.199
12,000
$0.197
15,000+
$0.192
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
SOT-343F-4
Mounting Method:
Surface Mount