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Manufacturer Part #

BFU660F,115

BFU660 Series 5.5 V 27 dB Gain NPN Wideband Silicon RF Transistor - SOT-343F-4

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
NXP BFU660F,115 - Technical Attributes
Attributes Table
Polarity: NPN
CE Voltage-Max: 5.5V
Package Style:  SOT-343F-4
Mounting Method: Surface Mount
$Features & Applications

The BFU660F Series is a NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

Features:

  • Low noise high linearity RF transistor
  • High output third-order intercept point 27 dBm at 1.8 GHz
  • 40 GHz fT silicon technology

Applications:

  • Analog/digital cordless applications
  • X-band high output buffer amplifier
  • ZigBee
  • SDARS second stage LNA
  • LTE, cellular, UMTS
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
13 Weeks
Minimum Order:
6000
Multiple Of:
3000
Total
$1,200.00
USD
Quantity
Web Price
3,000
$0.205
6,000
$0.20
9,000
$0.199
12,000
$0.197
15,000+
$0.192
Product Variant Information section