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Manufacturer Part #


BFU760 Series 2.8 V 25.5 dB Gain NPN Silicon Germanium RF Transistor-SOT-343F-4

ECAD Model:
Mfr. Name: NXP
Standard Pkg:
Date Code: 2121
Product Specification Section
NXP BFU760F,115 - Technical Attributes
Attributes Table
Polarity: NPN
Type: RF
CE Voltage-Max: 2.8V
Collector Current Max: 70mA
Power Dissipation-Tot: 220mW
Collector - Base Voltage: 10V
Emitter - Base Voltage: 1V
DC Current Gain-Min: 155
Collector - Current Cutoff: 100nA
Configuration: Single
Frequency - Transition: 45GHz
Noise Figure: 0.75dB
Moisture Sensitivity Level: 1
Package Style:  SOT-343F-4
Mounting Method: Surface Mount
$Features & Applications

The BFU760F Series is a NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.


  • Low noise high linearity RF transistor
  • High maximum output third-order intercept point 32 dBm at 1.8 GHz
  • 110 GHz fT silicon germanium technology


  • Ka band oscillators DRO’s
  • High linearity applications
  • Medium output power applications
  • Wi-Fi / WLAN / WiMAX
  • GPS
  • ZigBee
  • SDARS first stage LNA
  • LTE, cellular, UMTS

Pricing Section
Global Stock:
Cost Per Unit
Web Price:
$0.61 USD Each

$7.00 reeling fee is amortized over the number of components for each reel.
Mini-Reels are a custom product and are non-cancelable and non-returnable.