ON Semiconductor | MJE253G

The MJE253G is a Complementary Silicon Power Plastic Transistor with Collector−Emitter Voltage of 100 V, available in a TO-225 package.

Features:

• High Collector−Emitter Sustaining Voltage −VCEO(sus) = 100 Vdc (Min)
• High DC Current Gain @ IC = 200 mAdc
• hFE = 40−200
• hFE = 40−120
• Low Collector−Emitter Saturation Voltage −VCE(sat) = 0.3 Vdc (Max) @ IC = 500 mAdc
• High Current Gain Bandwidth Product − fT = 40 MHz (Min) @ IC = 100 mAdc
• Annular Construction for Low Leakages
• ICBO = 100 nAdc (Max) @ Rated VCB
• Pb−Free Packages are Available

Applications:

• Switching Applications
• Audio amplifiers

View the List of available MJE2 Series of Bipolar Transistors