Orders shipping outside of United States will be on hold while the company evaluates tariff impacts.Please contact your salesperson for assistance.
Free shipping within the continental US over $50. Conditions apply
Manufacturer Part #
IGT65R140D2ATMA1
GaNFET, 650V, 13A, 170MOHM, N-CH, TOLL
| | |||||||||||
| | |||||||||||
| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2000 per Reel Package Style:HSOF-8 Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2529 | ||||||||||
Product Specification Section
Infineon IGT65R140D2ATMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IGT65R140D2ATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/p/semiconductors--discretes--transistors--gallium-nitride-mosfets-gan-mosfets/igt65r140d2atma1-infineon-7198444
Infineon IGT65R140D2ATMA1 - Technical Attributes
Attributes Table
| Product Status: | Active |
| Technology: | GaNFET (Gallium Nitride) |
| Fet Type: | N-Ch |
| Drain Current: | 13A |
| Qg Gate Charge: | 1.8nC |
| Drain-to-Source Voltage [Vdss]: | 650V |
| Input Capacitance: | 155pF |
| Rated Power Dissipation: | 47W |
| Operating Temp Range: | -55°C to +150°C |
| Package Style: | HSOF-8 |
| Mounting Method: | Surface Mount |
Pricing Section
Global Stock:
2,000
USA:
2,000
On Order:
0
Factory Lead Time:
18 Weeks
Quantity
Unit Price
2,000+
$1.35
Product Variant Information section
Available Packaging
Package Qty:
2000 per Reel
Package Style:
HSOF-8
Mounting Method:
Surface Mount