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Manufacturer Part #

FGH30N60LSDTU

FGH30N60LSD Series 600 V 60 A MOS Gated High Voltage IGBT Switching - TO-247

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1842
Product Specification Section
Technical Attributes
Attributes Table
CE Voltage-Max: 600V
Collector Current @ 25C: 60A
Power Dissipation-Tot: 480W
Turn-on Delay Time: 18ns
Turn-off Delay Time: 250ns
Package Style:  TO-247-3
Mounting Method: Flange Mount
Features & Applications

The FGH30N60LSD is a 600 V 60 V, MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors.This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor

Features:

  • Low saturation voltage: VCE(sat) =1.1 V @ IC = 30 A
  • High Input Impedance
  • Low Conduction Loss 

Applications:

  • Energy Generation & Distribution
  • Solar Inverters
  • UPS, Welder

 

Pricing Section
Stock:
0
Minimum Order:
450
Multiple Of:
150
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$2,776.50
USD
Quantity
Web Price
150
$7.64
300
$6.26
450
$6.17
600+
$6.11
Product Variant Information section