Manufacturer Part #
IXBH Series Single 1700 V 42 A 37 ns t(on) Bipolar Mos Transistor - TO-247
|Standard Pkg:|| |
Product Variant Information section
IXYS IXBH42N170 - Product Specification
IXYS IXBH42N170 - Technical Attributes
|Collector Current @ 25C:||80A|
|Turn-on Delay Time:||37ns|
|Turn-off Delay Time:||340ns|
|Mounting Method:||Through Hole|
$Features & Applications
IXYS is a state of the art leader in MOSFET technology through the IXBH series. This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance.
The ruggedness that this technology offers combined with a low resistance factor results in very low power dissipation, in low voltage, and high current power switching applications. This series features wide-ranging operating junction temperatures (–55 degrees C to 150 degrees C) and is ideal for applications that require large amounts of power.
By delivering superior performance, in its MOSFET series, backed by higher efficiency, lower conduction losses and greater power density, IXYS firmly believes in innovation through its divisional focused approach. This has enabled IXYS to become well diversified in the consumer, military & aerospace, automotive and transportation markets.
Perfect for both commercial and industrial applications, the IXBH42N170 (this part is lead free) has the capacity to operate at 1700 V within an operating temperature range of 150 degrees C. The net result translates to a lower resistance (RDS (on) = 10 Ohms). Avalanche rated, the IXBH42N170 is able to reduce power dissipation levels to approximately 360 watts. The IXBH42N170 provides high speed, robust efficiency combined with low on-resistance and cost-effectiveness all in a TO-247 package format.