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Manufacturer Part #

NXH25C120L2C2SG

NXH25C120L2C Series 1200 V 25 A Through Hole Power Module IGBT - DIP-26

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Collector Current @ 25C: 25A
Power Dissipation-Tot: 20mW
Gate - Emitter Voltage: 4.8V to 6.8V
Pulsed Collector Current: 75A
Collector - Emitter Saturation Voltage: 1.7V
Turn-on Delay Time: 68ns
Turn-off Delay Time: 235ns
Qg Gate Charge: 269nC
Leakage Current: 400nA
Input Capacitance: 6200pF
Thermal Resistance: 0.54°C/W
Operating Temp Range: -40°C to +150°C
Package Style:  DIP-26
Mounting Method: Through Hole
Pricing Section
Stock:
0
Minimum Order:
1
Multiple Of:
1
18
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Total
$42.08
USD
Quantity
Web Price
1
$42.08
4
$39.34
15
$36.90
40
$35.19
100+
$33.66
Product Variant Information section