Manufacturer Part #
NXH35C120L2C2ESG
NXH35C120L2C Series 1200 V 35 A Through Hole Power Module IGBT - DIP-26
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:6 per Package Style:DIP-26 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
onsemi NXH35C120L2C2ESG - Product Specification
Shipping Information:
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Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi NXH35C120L2C2ESG - Technical Attributes
Attributes Table
| CE Voltage-Max: | 1200V |
| Collector Current @ 25C: | 35A |
| Power Dissipation-Tot: | 20mW |
| Gate - Emitter Voltage: | 20V |
| Pulsed Collector Current: | 105A |
| Collector - Emitter Saturation Voltage: | 1.8V |
| Turn-on Delay Time: | 104ns |
| Turn-off Delay Time: | 277ns |
| Qg Gate Charge: | 360nC |
| Reverse Recovery Time-Max: | 224ns |
| Leakage Current: | 400nA |
| Input Capacitance: | 8333pF |
| Thermal Resistance: | 0.83°C/W |
| Operating Temp Range: | -40°C to +150°C |
| Package Style: | DIP-26 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
27 Weeks
Quantity
Web Price
1
$73.17
4
$72.11
10
$71.41
25
$70.72
40+
$69.69
Product Variant Information section
Available Packaging
Package Qty:
6 per
Package Style:
DIP-26
Mounting Method:
Through Hole