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Manufacturer Part #

NXH35C120L2C2S1G

NXH35C120L2C Series1200 V 35 A Through Hole Power Module IGBT - DIP-26

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Collector Current @ 25C: 35A
Power Dissipation-Tot: 20mW
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 105A
Collector - Emitter Saturation Voltage: 1.8V
Turn-on Delay Time: 104ns
Turn-off Delay Time: 277ns
Qg Gate Charge: 360nC
Reverse Recovery Time-Max: 224ns
Leakage Current: 400nA
Input Capacitance: 8333pF
Thermal Resistance: 0.57°C/W
Operating Temp Range: -40°C to +150°C
Package Style:  DIP-26
Mounting Method: Through Hole
Pricing Section
Stock:
0
Minimum Order:
1
Multiple Of:
1
18
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Total
$43.25
USD
Quantity
Web Price
1
$43.25
4
$40.44
15
$37.93
40
$36.17
100+
$34.60
Product Variant Information section