Manufacturer Part #
NXH50C120L2C2ES1G
NXH50C120L2C Series 1200 V 50 A Through Hole Power Module IGBT - DIP-26
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:6 per Package Style:DIP-26 Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
onsemi NXH50C120L2C2ES1G - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
onsemi NXH50C120L2C2ES1G - Technical Attributes
Attributes Table
| CE Voltage-Max: | 1200V |
| Collector Current @ 25C: | 50A |
| Power Dissipation-Tot: | 20W |
| Gate - Emitter Voltage: | 20V |
| Pulsed Collector Current: | 150A |
| Collector - Emitter Saturation Voltage: | 1.8V |
| Turn-on Delay Time: | 144ns |
| Turn-off Delay Time: | 380ns |
| Qg Gate Charge: | 558nC |
| Reverse Recovery Time-Max: | 224ns |
| Leakage Current: | 400nA |
| Input Capacitance: | 11897pF |
| Thermal Resistance: | 0.26°C/W |
| Operating Temp Range: | -40°C to +150°C |
| Package Style: | DIP-26 |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
6 Weeks
Quantity
Web Price
1
$94.48
3
$93.31
10
$92.05
20
$91.33
40+
$89.98
Product Variant Information section
Available Packaging
Package Qty:
6 per
Package Style:
DIP-26
Mounting Method:
Through Hole