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Manufacturer Part #

NXH50C120L2C2ESG

NXH50C120L2C Series 1200 V 50 A Through Hole Power Module IGBT - DIP-26

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
CE Voltage-Max: 1200V
Collector Current @ 25C: 50A
Power Dissipation-Tot: 20W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 150A
Collector - Emitter Saturation Voltage: 1.8V
Turn-on Delay Time: 144ns
Turn-off Delay Time: 380ns
Qg Gate Charge: 558nC
Reverse Recovery Time-Max: 224ns
Leakage Current: 400nA
Input Capacitance: 11897pF
Thermal Resistance: 0.26°C/W
Operating Temp Range: -40°C to +150°C
Package Style:  DIP-26
Mounting Method: Through Hole
Pricing Section
Stock:
0
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Total
$55.95
USD
Quantity
Web Price
1
$55.95
4
$51.45
10
$48.68
25
$46.05
40+
$44.76
Product Variant Information section