
Manufacturer Part #
NXH50C120L2C2ESG
NXH50C120L2C Series 1200 V 50 A Through Hole Power Module IGBT - DIP-26
Product Specification Section
onsemi NXH50C120L2C2ESG - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
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onsemi NXH50C120L2C2ESG - Technical Attributes
Attributes Table
CE Voltage-Max: | 1200V |
Collector Current @ 25C: | 50A |
Power Dissipation-Tot: | 20W |
Gate - Emitter Voltage: | 20V |
Pulsed Collector Current: | 150A |
Collector - Emitter Saturation Voltage: | 1.8V |
Turn-on Delay Time: | 144ns |
Turn-off Delay Time: | 380ns |
Qg Gate Charge: | 558nC |
Reverse Recovery Time-Max: | 224ns |
Leakage Current: | 400nA |
Input Capacitance: | 11897pF |
Thermal Resistance: | 0.26°C/W |
Operating Temp Range: | -40°C to +150°C |
Package Style: | DIP-26 |
Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
6 Weeks
Quantity
Web Price
1
$75.91
4
$74.80
10
$74.08
25
$73.36
40+
$72.29
Product Variant Information section
Available Packaging
Package Qty:
6 per
Package Style:
DIP-26
Mounting Method:
Through Hole