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Manufacturer Part #

STGF10NB60SD

STGF10NB60SD Series 600 V 23 A Through Hole Silicon IGBT - TO-220FP

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 2013
Product Specification Section
Technical Attributes
Attributes Table
CE Voltage-Max: 600V
Collector Current @ 25C: 23A
Power Dissipation-Tot: 25W
Gate - Emitter Voltage: ±20V
Pulsed Collector Current: 80A
Collector - Emitter Saturation Voltage: 1.75V
Turn-on Delay Time: 0.7µs
Turn-off Delay Time: 1.2µs
Qg Gate Charge: 33nC
Reverse Recovery Time-Max: 37ns
Leakage Current: 100nA
Input Capacitance: 610pF
Thermal Resistance: 62.5°C/W
Operating Temp Range: -55°C to +150°C
No of Terminals: 3
Package Style:  TO-220FP (TO-220FPAB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
13,018
Germany (Online Only):
13,018
16,136
Factory Stock:Factory Stock:
0
Minimum Order:
50
Multiple Of:
50
Total
$119.00
USD
Quantity
Web Price
50
$2.38
150
$2.05
500
$1.98
1,000
$1.94
2,000+
$1.90
Product Variant Information section