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Manufacturer Part #

STGF4M65DF2

M Series 650 V 8 A Through Hole Silicon IGBT - TO-220FP

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
CE Voltage-Max: 650V
Collector Current @ 25C: 8A
Power Dissipation-Tot: 23W
Gate - Emitter Voltage: ±20V
Pulsed Collector Current: 16A
Collector - Emitter Saturation Voltage: 2.1V
Turn-on Delay Time: 12ns
Turn-off Delay Time: 86ns
Qg Gate Charge: 15.2nC
Reverse Recovery Time-Max: 133ns
Leakage Current: 250µA
Input Capacitance: 369pF
Thermal Resistance: 62.5°C/W
Operating Temp Range: -55°C to +175°C
No of Terminals: 3
Package Style:  TO-220FP (TO-220FPAB)
Mounting Method: Through Hole
Pricing Section
Stock:
0
Minimum Order:
1,550
Multiple Of:
50
On Order:
0
Factory Stock:Factory Stock:
0
Total
$697.50
USD
Quantity
Web Price
50
$0.45
2,000
$0.425
3,000
$0.405
4,000
$0.385
5,000+
$0.365
Product Variant Information section