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Manufacturer Part #

STGW40NC60KD

STGW Series Trade Switching Low On State Through hole IGBT - TO-247-3

Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code: 1807
Product Specification Section
Technical Attributes
Attributes Table
CE Voltage-Max: 600V
Collector Current @ 25C: 70A
Power Dissipation-Tot: 250W
Gate - Emitter Voltage: ±20V
Pulsed Collector Current: 220A
Collector - Emitter Saturation Voltage: 2.7V
Turn-on Delay Time: 46ns
Turn-off Delay Time: 164ns
Qg Gate Charge: 135nC
Reverse Recovery Time-Max: 45ns
Input Capacitance: 2870pF
Thermal Resistance: 50°C/W
Operating Temp Range: -55°C to +150°C
No of Terminals: 3
Package Style:  TO-247-3
Mounting Method: Through Hole
Features & Applications

The STGW40NC60KD is a 600 V short circuit rugged insulated gate bipolar transistor. It utilizes the advanced PowerMESH process resulting in an excellent trade-off between switching performance and low on-state behavior.

Features:

  • Low on-voltage drop (VCE(sat))
  • Low Cres / Cies ratio (no cross conduction susceptibility)
  • Short circuit withstand time 10 μs
  • IGBT co-packaged with ultra fast free-wheeling diode

Applications:

  • High frequency inverters
  • Motor drivers
Pricing Section
Stock:
0
Minimum Order:
600
Multiple Of:
30
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Total
$1,326.00
USD
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Quantity
Web Price
30
$2.65
120
$2.28
300
$2.21
750
$2.15
1,200+
$2.12
Product Variant Information section