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Manufacturer Part #

PMBFJ177,215

PMBFJ174 Series 30 V 20 mA P-Ch silicon Field-effect Transistor - SOT-23-3

Mfr. Name: NXP
Standard Pkg:
Product Variant Information section
Date Code: 1840
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 20mA
Drain-to-Source Voltage [Vdss]: 30V
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Features & Applications

Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue switches, choppers, commutators etc. using SMD technology. A special feature is the interchangeability of the drain and source connections.

Features:

  • Transistors with built-in bias resistors R1 and R2 (typ. 22 kW each)
  • No mutual interference between the transistors
  • Simplification of circuit design
  • Reduces number of components and board space

Applications:

  • Especially suitable for space reduction in interface and driver circuits
  • Inverter circuit configurations without use of external resistors

 

 

Pricing Section
Stock:
3,000
Minimum Order:
3,000
Multiple Of:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Total
$450.00
USD
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Quantity
Web Price
3,000
$0.15
6,000
$0.123
12,000
$0.121
15,000+
$0.12
Product Variant Information section