text.skipToContent text.skipToNavigation

Manufacturer Part #

2N7002PV,115

2N7002PV Series N-Channel 60 V 2 Ohm 330 mW 0.8 nC SMT TrenchMOS FET - SOT-666

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 330mW
Qg Gate Charge: 0.8nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 350mA
Turn-on Delay Time: 3ns
Turn-off Delay Time: 10ns
Rise Time: 4ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.4V
Technology: Si
Height - Max: 0.6mm
Length: 1.7mm
Input Capacitance: 50pF
Package Style:  SOT-666
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany (Online Only):
0
On Order:
0
Factory Stock:Factory Stock:
0
Minimum Order:
20000
Multiple Of:
4000
Total
$1,860.00
USD
Quantity
Web Price
4,000
$0.116
8,000
$0.0945
12,000
$0.0936
16,000+
$0.093
Product Variant Information section