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Manufacturer Part #

AUIRF7342QTR

Dual P-Channel 55 V 0.17 Ohm 38 nC Automotive HEXFET® Power Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: -55V
Drain-Source On Resistance-Max: 0.17Ω
Rated Power Dissipation: 2W
Qg Gate Charge: 38nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: -3.4A
Turn-on Delay Time: 22ns
Turn-off Delay Time: 64ns
Rise Time: 15ns
Fall Time: 32ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -3V
Technology: Advanced Planar Technology
Height - Max: 1.75mm
Length: 5mm
Input Capacitance: 690pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52 Weeks
Minimum Order:
4000
Multiple Of:
4000
Total
$5,360.00
USD
Quantity
Web Price
4,000+
$1.34
Product Variant Information section