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Manufacturer Part #

AUIRFR6215

Single P-Channel 150 V 295 mOhm 66 nC Automotive HEXFET® Power Mosfet - TO-252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 150V
Drain-Source On Resistance-Max: 295mΩ
Rated Power Dissipation: 110|W
Qg Gate Charge: 66nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 13A
Turn-on Delay Time: 14ns
Turn-off Delay Time: 53ns
Rise Time: 36ns
Fall Time: 37ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Planar Technology
Height - Max: 2.3mm
Length: 6.5mm
Input Capacitance: 860pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
39 Weeks
Minimum Order:
3000
Multiple Of:
75
Total
$4,380.00
USD
Quantity
Web Price
75
$1.82
225
$1.56
375
$1.54
1,500
$1.48
2,250+
$1.46
Product Variant Information section