text.skipToContent text.skipToNavigation

Truck-Icon.svgNEW! Free shipping over $50 USD. Learn more

warning.svgShipments may be delayed due to increased processing times and order volumes.

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. BSP125H6327XTSA1

Infineon | BSP125H6327XTSA1

Manufacturer Part #

BSP125H6327XTSA1

Single N-Channel 600 V 45 Ohm 4.5 nC SIPMOS® Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2053
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 45Ω
Rated Power Dissipation: 1.8|W
Qg Gate Charge: 4.4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 0.12A
Turn-on Delay Time: 1.7ns
Turn-off Delay Time: 20ns
Rise Time: 14.4ns
Fall Time: 110ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.9V
Technology: PowerTrench
Height - Max: 1.6mm
Length: 6.5mm
Input Capacitance: 100pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
100,000
Germany (Online Only):
100,000
On Order:
0
Factory Stock:Factory Stock:
0
Minimum Order:
1000
Multiple Of:
1000
Total
$665.00
USD
Quantity
Web Price
1,000
$0.665
2,000
$0.63
3,000
$0.60
4,000
$0.57
5,000+
$0.54
Product Variant Information section