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Manufacturer Part #

BSP125H6327XTSA1

Single N-Channel 600 V 45 Ohm 4.5 nC SIPMOS® Power Mosfet - SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2220
Product Specification Section
Infineon BSP125H6327XTSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 45Ω
Rated Power Dissipation: 1.8|W
Qg Gate Charge: 4.4nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 0.12A
Turn-on Delay Time: 1.7ns
Turn-off Delay Time: 20ns
Rise Time: 14.4ns
Fall Time: 110ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.9V
Technology: PowerTrench
Height - Max: 1.6mm
Length: 6.5mm
Input Capacitance: 100pF
Package Style:  SOT-223 (TO-261-4, SC-73)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
24,000
Germany (Online Only):
24,000
56,000
Factory Stock:Factory Stock:
0
Minimum Order:
1000
Multiple Of:
1000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$470.00
USD
Quantity
Web Price
1,000
$0.47
2,000
$0.45
3,000
$0.435
5,000
$0.42
10,000+
$0.40
Product Variant Information section