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Manufacturer Part #

BST82,215

BST82 Series 100 V 10 Ohm 0.83 W N-Channel Silicon Surface Mount MOSFET - SOT-23

ECAD Model:
Mfr. Name: Nexperia
Standard Pkg:
Date Code: 2226
Product Specification Section
Nexperia BST82,215 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 10Ω
Rated Power Dissipation: 0.83W
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 190mA
Turn-on Delay Time: 10ns
Turn-off Delay Time: 15ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: Si
Height - Max: 1.1mm
Length: 3mm
Input Capacitance: 25pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
$Features & Applications

The BST82 is a Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

This product is designed and qualified for use in computing, communications, consumer and industrial applications only.

Features:

  • Saves PCB space due to small footprint
  • Suitable for high frequency applications due to fast switching characteristics
  • Suitable for logic level gate drive sources

Applications:

  • High-speed line drivers
  • Logic level translators
  • Relay drivers

Pricing Section
Global Stock:
1,506,000
Germany (Online Only):
1,506,000
On Order:
0
Factory Stock:Factory Stock:
0
Minimum Order:
3000
Multiple Of:
3000
Total
$269.70
USD
Quantity
Web Price
3,000
$0.0899
9,000
$0.0864
15,000
$0.0849
30,000
$0.0828
60,000+
$0.0797