
Manufacturer Part #
BST82,215
BST82 Series 100 V 10 Ohm 0.83 W N-Channel Silicon Surface Mount MOSFET - SOT-23
Product Specification Section
Nexperia BST82,215 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Nexperia BST82,215 - Technical Attributes
Attributes Table
Fet Type: | N-Ch |
No of Channels: | 1 |
Drain-to-Source Voltage [Vdss]: | 100V |
Drain-Source On Resistance-Max: | 10Ω |
Rated Power Dissipation: | 0.83W |
Gate-Source Voltage-Max [Vgss]: | 20V |
Drain Current: | 190mA |
Turn-on Delay Time: | 10ns |
Turn-off Delay Time: | 15ns |
Operating Temp Range: | -55°C to +150°C |
Gate Source Threshold: | 2V |
Technology: | Si |
Height - Max: | 1.1mm |
Length: | 3mm |
Input Capacitance: | 25pF |
Package Style: | SOT-23 (SC-59,TO-236) |
Mounting Method: | Surface Mount |
Features & Applications
The BST82 is a Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
Features:
- Saves PCB space due to small footprint
- Suitable for high frequency applications due to fast switching characteristics
- Suitable for logic level gate drive sources
Applications:
- High-speed line drivers
- Logic level translators
- Relay drivers
Pricing Section
Global Stock:
609,000
Germany (Online Only):
609,000
On Order:
0
Factory Lead Time:
4 Weeks
Quantity
Web Price
3,000
$0.0632
9,000
$0.0608
15,000
$0.0597
30,000
$0.0582
60,000+
$0.056
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
SOT-23 (SC-59,TO-236)
Mounting Method:
Surface Mount