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Manufacturer Part #

CHT-PLA8543D-TO257-T

CHT-NEPTUNE: 20 V 10 A High Temperature Silicon Carbide Mosfet - TO-257-3

ECAD Model:
Mfr. Name: CISSOID
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
CISSOID CHT-PLA8543D-TO257-T - Technical Attributes
Attributes Table
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 120mΩ
Rated Power Dissipation: 30W
Qg Gate Charge: 107nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 10A
Turn-on Delay Time: 21ns
Turn-off Delay Time: 49ns
Rise Time: 39ns
Fall Time: 24ns
Operating Temp Range: -55°C to +225°C
Gate Source Threshold: 4.45V
Height - Max: 16.5mm
Input Capacitance: 1337pF
Package Style:  TO-257
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
5
Multiple Of:
1
Total
$2,776.10
USD
Quantity
Web Price
1
$567.00
3
$557.64
4
$555.22
10
$547.56
15+
$540.00
Product Variant Information section