text.skipToContent text.skipToNavigation

Manufacturer Part #

DMN3135LVT-7

Single N-Channel 30 V 100 mOhm 4.1 nC 1.27 W Silicon SMT Mosfet - TSOT-26

Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 1939
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 60mΩ
Rated Power Dissipation: 0.84W
Qg Gate Charge: 9nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 3.5A
Turn-on Delay Time: 2.6ns
Turn-off Delay Time: 13.1ns
Rise Time: 4.6ns
Fall Time: 2.5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 1.8V
Input Capacitance: 305pF
Package Style:  TSOT-26
Mounting Method: Surface Mount
Pricing Section
Stock:
0
Minimum Order:
1
Multiple Of:
3,000
On Order:
0
Factory Stock:Factory Stock:
21,000
Factory Lead Time:
5-10 Days
Total
$0.34
USD
tariff icon
Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Quantity
Web Price
1
$0.335
50
$0.265
100
$0.255
500
$0.23
1,500+
$0.22
Product Variant Information section