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Manufacturer Part #

DMN6075S-7

Single N-Channel 60 V 120 mOhm 12.3 nC 0.8 W Silicon Mosfet - SOT-23

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Date Code: 1916
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 120MΩ
Rated Power Dissipation: 0.8W
Qg Gate Charge: 12.3nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 2.5A
Turn-on Delay Time: 3.5ns
Turn-off Delay Time: 35ns
Rise Time: 4.1ns
Fall Time: 11ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Height - Max: 1mm
Length: 3mm
Input Capacitance: 606pF
Package Style:  SOT-23 (SC-59,TO-236)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
22 Weeks
Minimum Order:
1
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$0.33
USD
Quantity
Web Price
1
$0.325
50
$0.147
100
$0.127
500
$0.092
1,500+
$0.0736