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Diodes Incorporated | DMTH10H1M7SPGWQ-13

Manufacturer Part #

DMTH10H1M7SPGWQ-13

N-Channel 100 V 352 A 1.5 mOhm SMT Enhancement Mode Mosfet - PowerDI8080-5

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMTH10H1M7SPGWQ-13 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 1.5mΩ
Rated Power Dissipation: 5W to 405W
Qg Gate Charge: 171nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 352A
Turn-on Delay Time: 28ns
Turn-off Delay Time: 71ns
Rise Time: 43ns
Fall Time: 54ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Height - Max: 1.7mm
Length: 6.3mm
Input Capacitance: 10881pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Germany:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
36 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$10,820.00
USD
Quantity
Unit Price
2,000+
$5.41
Product Variant Information section