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Manufacturer Part #

DMTH6016LPSQ-13

Single N-Channel 60 V 2.6 W 17 nC Silicon Surface Mount Mosfet - POWERDI5060-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2315
Product Specification Section
Diodes Incorporated DMTH6016LPSQ-13 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 24mΩ
Rated Power Dissipation: 2.6W
Qg Gate Charge: 17nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 9.8A
Turn-on Delay Time: 3.4ns
Turn-off Delay Time: 13ns
Rise Time: 5.2ns
Fall Time: 7ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.5V
Technology: Si
Height - Max: 1.1mm
Length: 5.15mm
Input Capacitance: 864pF
Pricing Section
Global Stock:
127,500
Germany (Online Only):
127,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$512.50
USD
Quantity
Web Price
2,500
$0.205
5,000
$0.20
7,500
$0.199
10,000
$0.197
12,500+
$0.192
Product Variant Information section