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Manufacturer Part #

FCB36N60NTM

MOSFET N-CH 600V 36A D2PAK

Mfr. Name: ON Semiconductor
Standard Pkg:
Date Code: 1943
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 90mΩ
Rated Power Dissipation: 312|W
Qg Gate Charge: 112nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The FCB36N60NTM is a part of FCB36N60 Series 600 V 90 mΩ SupreMOS MOSFET next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies

By utilizing this advanced technology and precise process control, SupreMOS provides world class Rsp, superior switching performance and ruggedness.

Features:

  • RDS(on) = 81m ( Typ.)@ VGS = 10 V, ID = 18 A
  • Ultra low gate charge ( Typ. Qg = 86nC)
  • Low effective output capacitance
  • 100% avalanche tested
  • RoHS compliant

Applications:

  • AC-DC SMPS
  • Server/telecom power
  • FPD TV power
  • ATX power
  • Industrial power applications
Pricing Section
Stock:
3,200
Minimum Order:
800
Multiple Of:
800
7,200
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$3,192.00
USD
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Quantity
Web Price
800+
$3.99