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Manufacturer Part #

FCMT199N60

MOSFET 199mohm 600V SuperFET2

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.199Ω
Rated Power Dissipation: 208W
Qg Gate Charge: 57nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 20.2A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 64ns
Rise Time: 10ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Input Capacitance: 2043pF
Mounting Method: Surface Mount
Pricing Section
Stock:
0
Minimum Order:
3,000
Multiple Of:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Total
$3,690.00
USD
Quantity
Web Price
3,000+
$1.23
Product Variant Information section