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Manufacturer Part #

FCP13N60N

Single N-Channel 600 V 0.258 Ohm 39.5 nC 33.8 W Silicon Mosfet - TO-220-3

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2020
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.258Ω
Rated Power Dissipation: 33.8W
Qg Gate Charge: 39.5nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 13A
Turn-on Delay Time: 14.5ns
Turn-off Delay Time: 45ns
Rise Time: 10.6ns
Fall Time: 9.8ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 9.4mm
Length: 10.67mm
Input Capacitance: 1325pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Stock:
0
Minimum Order:
800
Multiple Of:
50
1,100
Factory Stock:Factory Stock:
0
Total
$1,608.00
USD
Quantity
Web Price
1
$2.41
30
$2.16
100
$2.08
300
$2.01
1,000+
$1.93
Product Variant Information section