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Manufacturer Part #

FCP16N60N

MOSFET N-CH 600V 16A TO-220-3

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1932
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.199Ω
Rated Power Dissipation: 134.4W
Qg Gate Charge: 52.3nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 16A
Turn-on Delay Time: 15.8ns
Turn-off Delay Time: 60.3ns
Rise Time: 15.5ns
Fall Time: 20.2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: Si
Height - Max: 16.51mm
Length: 10.36mm
Input Capacitance: 1630pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Features & Applications
Family Name: Power MOSFET Technology

Over View Copy: This cost-effective technology enhances system performance in the areas of both efficiency and reliability. Renown for it’s fast switching speed, this MOSFET series provides an excellent solution in both high-power and high-current applications, all the while optimizing switching performance. 

The ruggedness that this technology offers, combined with its low package cost, has made the MOSFET universally preferred for all commercial-industrial applications. The robust design is ideal for applications that require large amounts of power.

Pricing Section
Stock:
0
Minimum Order:
800
Multiple Of:
800
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$1,984.00
USD
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Quantity
Web Price
800
$2.48
1,600+
$1.98
Product Variant Information section