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Manufacturer Part #

FDA20N50-F109

N-channel 500 V 230 mOhm 280 W Through Hole UniFETTM Mosfet - TO-3PN

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 1917
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 500V
Drain-Source On Resistance-Max: 0.23Ω
Rated Power Dissipation: 280W
Qg Gate Charge: 45.6nC
Gate-Source Voltage-Max [Vgss]: 30V
Drain Current: 22A
Turn-on Delay Time: 95ns
Turn-off Delay Time: 100ns
Rise Time: 375ns
Fall Time: 105ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 5V
Input Capacitance: 2400pF
Package Style:  TO-3PN
Mounting Method: Through Hole
Pricing Section
Stock:
6,850
Minimum Order:
100
Multiple Of:
450
On Order:
0
Factory Stock:Factory Stock:
0
Total
$196.00
USD
Quantity
Web Price
30
$1.96
900
$1.60
1,350
$1.58
1,800+
$1.57
Product Variant Information section