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Manufacturer Part #

FDB3652

N-Channel 100 V 16 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2027
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 16mΩ
Rated Power Dissipation: 150|W
Qg Gate Charge: 41nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The FDB3652 is a FDB3652 Series 100 V 16 mΩ N-Channel Power Trench Mosfet Available in TO-263AB package

Product Fatures :

  • rDS(ON) = 14 mΩ (Typ.), VGS = 10 V, ID = 61 A
  • Qg(tot) = 41nC (Typ.), VGS = 10 V
  • Low Miller Charge
  • Low QRR Body Diode
  • UIS Capability (Single Pulse and Repetitive Pulse)
  • Qualified to AEC Q101
  • RoHS CompliantFormerly developmental type 82769

Applications :

  • DC/DC converters and Off-Line UPS
  • Distributed Power Architectures and VRMs
  • Primary Switch for 24V and 48V Systems
  • High Voltage Synchronous Rectifier
  • Direct Injection / Diesel Injection Systems
  • 42V Automotive Load Control
  • Electronic Valve Train Systems
Pricing Section
Stock:
0
Minimum Order:
800
Multiple Of:
800
800
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$704.00
USD
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Quantity
Web Price
800
$0.88
1,600
$0.72
2,400
$0.71
3,200+
$0.705
Product Variant Information section