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Manufacturer Part #

FDC608PZ

P-Channel 20 V 30 mOhm 2.5V Specified PowerTrench Mosfet SSOT-6

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Date Code: 2047
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 30mΩ
Rated Power Dissipation: 0.8|W
Qg Gate Charge: 17nC
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications

The FDC608PZ is a 20 V, 30 mOhm P-Channel 2.5 V Specified PowerTrench Mosfet in a SSOT-6 package .

This P-Channel MOSFET has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications like load switching and power management, battery power circuits, and DC/DC conversions.

Product Features :

  • -5.8 A, -20 V, RDS(on) = 30 mΩ @ VGS = -4.5 V RDS(on) = 43 mΩ @ VGS = -2.5 V
  • Low gate charge 
  • High performance trench technology for extremely low RDS(on)
  • SuperSOT™ ¨C6 package: small footprint (72% smaller than standard SO¨C8) low profile (1mm thick)

Applications :

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Medical Electronics/Devices
Pricing Section
Global Stock:
0
USA:
0
3,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$720.00
USD
Quantity
Web Price
3,000
$0.24
6,000
$0.196
9,000
$0.194
12,000
$0.193
15,000+
$0.192