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Manufacturer Part #

FDC6303N

Dual N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SSOT-6

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 0.45Ω
Rated Power Dissipation: 0.7|W
Qg Gate Charge: 1.64nC
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications

The FDC6303N is a 25 V 0.45 Ohm Surface Mount Dual N-Channel Digital FET in a SSOT-6 package .

These dual N-Channel logic level enhancement mode field effect transistors are produced using a very high density process especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.

Product Features :

  • 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.6 Ω @ VGS = 2.7 V, RDS(ON) = 0.45 Ω @ VGS= 4.5 V .
  • Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) 1.5 V.
  • Gate-Source Zener for ESD ruggedness. 6 kV Human Body Model.
  • Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET.

Applications :

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Medical Electronics/Devices
Pricing Section
Stock:
516,000
Minimum Order:
3,000
Multiple Of:
3,000
201,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$363.00
USD
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Quantity
Web Price
3,000
$0.121
6,000
$0.101
12,000
$0.0997
15,000
$0.0992
45,000+
$0.097