text.skipToContent text.skipToNavigation

Manufacturer Part #

FDC6321C

Dual N/P Channel 25 V 0.33 Ω 0.7 W Surface Mount Digital Fet - SOT-23-6

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 25V/-25V
Drain-Source On Resistance-Max: 450mΩ/1.1mΩ
Rated Power Dissipation: 700|mW
Qg Gate Charge: 1.64nC/1.1nC
Mounting Method: Surface Mount
Features & Applications

The FDC6321C is a FDC series of 25 V 0.45 Ohm Dual N and P-Channel Digital FET and is available in a SSOT-6 package .

These dual N & P Channel logic level enhancement mode field effect transistors are produced using high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this dual digital FET can replace several digital transistors with different bias resistors.

Product Features :

  • N-Ch 25 V, 0.68 A, RDS(ON) = 0.45 Ω @ VGS= 4.5 V
  • P-Ch -25 V, -0.46 A, RDS(ON) = 1.1 Ω @ VGS= -4.5 V.
  • Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) 1.0 V.
  • Gate-Source Zener for ESD ruggedness. 6kV Human Body Model
  • Replace multiple dual NPN & PNP digital transistors. 

Applications :

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Medical Electronics/Devices
Pricing Section
Stock:
1,750
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.39
USD
Quantity
Web Price
1
$0.39
50
$0.26
100
$0.24
500
$0.205
1,500+
$0.181