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Manufacturer Part #

FDC6327C

Dual N/P-Channel 20 V 0.08 Ohm 2.5 V Specified PowerTrench Mosfet - SSOT-6

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N/P-Ch
Drain-to-Source Voltage [Vdss]: 20V/-20V
Drain-Source On Resistance-Max: 0.08Ω/0.17Ω
Rated Power Dissipation: 0.7|W
Qg Gate Charge: 3.25nC/2.85nC
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications
The FDC6327C is a 20 V 0.08 Ohm Dual N/P-Channel 2.5 V Specified PowerTrench Mosfet in a SSOT-6 package .

These N & P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.

Product Features :

  • N-Channel 2.7 A, 20V. RDS(on) = 0.08 Ω @ VGS = 4.5 V, RDS(on) = 0.12 Ω @ VGS = 2.5V P-Channel
  • 0.6A, -20V.RDS(on) = 0.17 Ω @VGS= -4.5 V, RDS(on) = 0.25 Ω @ V GS = -2.5 V
  • Fast switching speed.
  • Low gate charge.
  • High performance trench technology for extremelylow RDS(ON) .
  • SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).

Applications :

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Medical Electronics/Devices
Pricing Section
Stock:
203,950
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.43
USD
Quantity
Web Price
1
$0.43
50
$0.29
100
$0.27
500
$0.23
1,500+
$0.21