
Manufacturer Part #
FDC6327C
Dual N/P-Channel 20 V 0.08 Ohm 2.5 V Specified PowerTrench Mosfet - SSOT-6
Product Specification Section
Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
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Date
Part Status:
Active
Active
Technical Attributes
Attributes Table
Fet Type: | Dual N/P-Ch |
Drain-to-Source Voltage [Vdss]: | 20V/-20V |
Drain-Source On Resistance-Max: | 0.08Ω/0.17Ω |
Rated Power Dissipation: | 0.7|W |
Qg Gate Charge: | 3.25nC/2.85nC |
Package Style: | SSOT-6 |
Mounting Method: | Surface Mount |
Features & Applications
The FDC6327C is a 20 V 0.08 Ohm Dual N/P-Channel 2.5 V Specified PowerTrench Mosfet in a SSOT-6 package .
These N & P-Channel 2.5V specified MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
Product Features :
- N-Channel 2.7 A, 20V. RDS(on) = 0.08 Ω @ VGS = 4.5 V, RDS(on) = 0.12 Ω @ VGS = 2.5V P-Channel
- 0.6A, -20V.RDS(on) = 0.17 Ω @VGS= -4.5 V, RDS(on) = 0.25 Ω @ V GS = -2.5 V
- Fast switching speed.
- Low gate charge.
- High performance trench technology for extremelylow RDS(ON) .
- SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).
Applications :
- AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
- External AC-DC Merchant Power Supply - Wireless Communications
- Wireless LAN Card & Broadband Access
- Medical Electronics/Devices
Pricing Section
Global Stock:
200,950
USA:
200,950
Product Variant Information section
Available Packaging
Package Qty:
3000 per
Package Style:
SSOT-6
Mounting Method:
Surface Mount