text.skipToContent text.skipToNavigation

Manufacturer Part #

FDC634P

P-Channel 20 V 80 mOhm Surface Mount 2.5V Specified PowerTrench Mosfet SSOT-6

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 80mΩ
Rated Power Dissipation: 0.8|W
Qg Gate Charge: 7.2nC
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications

The FDC634P is a 20 V 80 mΩ 2.5V Specified PowerTrench P-Channel  Mosfet available in a SSOT-6 Package .

This P-Channel MOSFET uses low voltage PowerTrench process. It has been optimized for battery power management applications.

Product Features:

  • -3.5 A, -20 V
  • RDS(ON) = 80 mΩ @ VGS = -4.5 V
  • RDS(ON) = 110 mΩ @ VGS = -2.5 V
  • Low gate charge (7.2 nC typical)
  • High performance trench technology for extremelylow RDS(ON

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Military & Civil Aerospace
  • Routers & LAN Switches
  • Medical Electronics/Devices
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52 Weeks
Minimum Order:
1
Multiple Of:
3000
Total
$0.52
USD
Quantity
Web Price
1
$0.52
50
$0.325
100
$0.30
500
$0.25
1,500+
$0.22
Product Variant Information section