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Manufacturer Part #

FDC637AN

N-Channel 20V 0.024 Ohm 2.5V Specified PowerTrench Mosfet

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 0.024Ω
Rated Power Dissipation: 0.8|W
Qg Gate Charge: 10.5nC
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications

The FDC637AN is a 20 V 0.024 Ω , 2.5 V Specified PowerTrench N-Channel Mosfet available in a SSOT-6 package .

This N-Channel 2.5 V specified MOSFET is advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint compared with bigger SO-8 and TSSOP-8 packages.

Product Features:

  • 6.2 A, 20 V. RDS(on) = 0.024 Ω @ VGS = 4.5 V, RDS(on) = 0.032 Ω @ VGS = 2.5 V
  • Fast switching speed.
  • Low gate charge (10.5nC typical).
  • High performance trench technology for extremelylow RDS(ON) .
  • SuperSOT™ -6 package: small footprint (72% smallerthan standard SO-8); low profile (1mm thick).

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Military & Civil Aerospace
  • Routers & LAN Switches
  • Medical Electronics/Devices
Pricing Section
Stock:
9,000
Minimum Order:
3,000
Multiple Of:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$552.00
USD
Quantity
Web Price
3,000
$0.184
6,000
$0.148
9,000+
$0.147