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Manufacturer Part #

FDC638P

P-Channel 20 V 48 mOhm 2.5V PowerTrench Specified Mosfet SSOT-6

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2048
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 48mΩ
Rated Power Dissipation: 1.6|W
Qg Gate Charge: 10nC
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications
The FDC638P is a 20 V 48 mΩ, 2.5 V Specified PowerTrench P-Channel Mosfet available in a SSOT-6 package .

This P-Channel 2.5 V specified MOSFET is advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance     These devices are well suited for battery power applications:load switching and power management,battery charging circuits,and DC/DC conversion.

Product Features:

  • 4.5 A, –20 V.RDS(ON) = 48 mW @ VGS = –4.5 V
  • RDS(ON) = 65 mW @ VGS = –2.5 V
  • Low gate charge (10 nC typical)
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOT ™ –6 package: small footprint (72% smaller than standard SO-8; low profile (1mm thick)

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Military & Civil Aerospace
  • Routers & LAN Switches
  • Medical Electronics/Devices
Pricing Section
Global Stock:
0
USA:
0
99,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
51 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$750.00
USD
Quantity
Web Price
3,000
$0.25
6,000
$0.24
9,000
$0.225
12,000
$0.215
15,000+
$0.205
Product Variant Information section