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Manufacturer Part #

FDC6401N

Dual N-Channel 20 V 70 mOhm 2.5V Specified PowerTrench Mosfet SSOT-6

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 20V
Drain-Source On Resistance-Max: 70mΩ
Rated Power Dissipation: 0.7|W
Qg Gate Charge: 4.6nC
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications

The FDC6401N is a 20 V 3.0 A, 2.5 V specified PowerTrench Dual N- Channel Mosfet available in a SSOT-6 Package .

This Dual N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

Product Features:

  • 3.0 A, 20 V
  • RDS(ON) = 70 mΩ @ VGS = 4.5 V
  • RDS(ON) = 95 mΩ @ VGS = 2.5 V
  • Low gate charge
  • High performance trench technology for extremelylow RDS(on)
  • High power and current handling capability

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Military & Civil Aerospace
  • Routers & LAN Switches
  • Medical Electronics/Devices
Pricing Section
Stock:
176,750
Minimum Order:
1
Multiple Of:
1
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.19
USD
Quantity
Web Price
1
$0.193
50
$0.166
100
$0.161
500
$0.151
1,500+
$0.145