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Manufacturer Part #

FDD3860

N-Channel 100 V 36 mOhm Surface Mount PowerTrench Mosfet - DPAK-3

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code: 2038
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 36mΩ
Rated Power Dissipation: 3.1|W
Qg Gate Charge: 31nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Features & Applications

The FDD3860 is a  100 V 36 mΩ N-Channel PowerTrench Mosfet Available in a DPAK-3 Package. It is a high density trench MOSFET process, this part is tailored for low rDS(on) and low Qg figure of merit and with avalanche ruggedness for a wide range of switching applications .

Features:

  • Max rDS(on) = 36mΩ at VGS = 10V, ID = 5.9A
  • High performance trench technology for extremely low rDS(on)
  • RoHS Compliant

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Access Point/Router
  • Server & Mainframe
  • Media Tablets
Pricing Section
Stock:
0
Minimum Order:
1
Multiple Of:
2,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.98
USD
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Quantity
Web Price
1
$0.975
50
$0.745
100
$0.71
250
$0.665
500+
$0.635
Product Variant Information section