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Manufacturer Part #

FDG6321C

Dual N & P Channel 25 V 0.45 Ohm Digital FET SC70-6

Product Specification Section
Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-Source On Resistance-Max: 0.45Ω
Rated Power Dissipation: 0.3|W
Package Style:  SOT-363 (SC-70-6, SC-88)
Mounting Method: Surface Mount
Features & Applications

The FDG6321C is a 25 V 0.45 Ω Dual N & P Channel Digital Field Effect Transistor Available in a SC70-6 Package. It works at an operating temperature ranging between -55 °C to 150 °C.

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using a very high density process especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this dual digital FET can replace several different digital transistors, with different bias resistor values

Features:

  • N-Channel 0.50 A, 25 V, RDS(ON) = 0.45 Ω @ VGS= 4.5 V, RDS(ON) = 0.60 Ω @ VGS= 2.7 V.
  • P-Channel -0.41 A, -25 V, RDS(ON) = 1.1 Ω @ VGS= -4.5 V, RDS(ON) = 1.5 Ω @ VGS= -2.7 V.
  • Very small package outline SC70-6.
  • Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) 1.5 V).
  • Gate-Source Zener for ESD ruggedness (6kV Human Body Model).

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Medical Electronics/Devices
Pricing Section
Stock:
9,000
Minimum Order:
3,000
Multiple Of:
3,000
12,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$444.00
USD
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Quantity
Web Price
3,000
$0.148
6,000
$0.121
12,000
$0.119
15,000+
$0.118