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Manufacturer Part #

FDMC6675BZ

ST3, PCH

Mfr. Name: ON Semiconductor
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 14.4mΩ
Rated Power Dissipation: 2.3|W
Qg Gate Charge: 46nC
Package Style:  MLP-3.3x3.3
Mounting Method: Surface Mount
Features & Applications

FDMC6675BZ is a -30 V P-channel power Trench® MOSFET. The FDMC6675BZ has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

Features:

  • Max rDS(on) = 14.4 md at VGS = -10 V, ID = -9.5 A
  • Max rDS(on) = 27.0 mΩ at VGS = -4.5 V, ID = -6.9 A
  • HBM ESD protection level of 8 kV typical
  • Extended VGSS range (-25 V) for battery applications
  • High performance trench technology for extremely low rDS(on)
  • High power and current handling capability

Applications:

  • Load Switch in Notebook and Server
  • Notebook Battery Pack Power Management
Pricing Section
Stock:
0
Minimum Order:
1
Multiple Of:
3,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$0.78
USD
Quantity
Web Price
1
$0.78
50
$0.665
100
$0.65
500
$0.61
1,500+
$0.585
Product Variant Information section