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Manufacturer Part #

FDMS2672

FDMS2672 Series 200 V 77 mOhm N-Channel UltraFET Trench Mosfet - Power-56-8

Mfr. Name: ON Semiconductor
Standard Pkg:
Date Code: 1843
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 200V
Drain-Source On Resistance-Max: 77mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 42nC
Mounting Method: Surface Mount
Features & Applications

The FDMS2672 UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.

Features:

  • Max rDS(on) = 77 mΩ at VGS = 10 V, ID = 3.7 A
  • Max rDS(on) = 88 mΩ at VGS = 6 V, ID = 3.5 A
  • Low Miller Charge
  • RoHS Compliant

Applications:

  • DC - DC Conversion
Pricing Section
Stock:
0
Minimum Order:
3,000
Multiple Of:
3,000
12,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Total
$2,385.00
USD
Quantity
Web Price
3,000+
$0.795