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Manufacturer Part #

FDN306P

P-Channel 12 V 40 mOhm 1.8 V Specified PowerTrench Mosfet SSOT-3

ECAD Model:
Mfr. Name: ON Semiconductor
Standard Pkg:
Date Code: 2021
Product Specification Section
Technical Attributes
Attributes Table
Fet Type: P-Ch
Drain-to-Source Voltage [Vdss]: 12V
Drain-Source On Resistance-Max: 40mΩ
Rated Power Dissipation: 0.5|W
Package Style:  SSOT-3
Mounting Method: Surface Mount
Features & Applications
The FDN306P is a 40 mOhm and 1.8 V specified powertrench P-channel MOSFET. It is available in surface mount SSOT-3  package.

This P-Channel MOSFET has been optimized for battery power management applications.

Features:

  • –2.6 A, –12 V.
    • RDS(ON) = 40 mΩ @ VGS = –4.5 V
    • RDS(ON) = 50 mΩ @ VGS = –2.5 V
    • RDS(ON) = 80 mΩ @ VGS = –1.8 V
  • Fast switching speed
  • High performance trench technology for extremely low RDS(ON)
  • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint

Applications:

  • Battery management
  • Load switch
  • Battery protection
Pricing Section
Global Stock:
203,148
USA:
203,148
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
50 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$0.44
USD
Quantity
Web Price
1
$0.44
50
$0.275
100
$0.255
500
$0.21
1,500+
$0.185